Volver a Toshiba

Toshiba Automotive U-MOSVI Power MOSFETs

Toshiba Automotive U-MOSVI Power MOSFETs are -40V P-channel power MOSFETs for automotive applications. These devices feature a gate drive voltage of -4.5V compared with -6V for the conventional products in the DPAK+ package. This feature allows systems to be used even when the battery voltage drops. The Toshiba Automotive U-MOSVI Power MOSFETs feature low on-resistance.

Features

  • Low on-resistance
    • RDS(ON) = 1.45mΩ (max) @VGS = -10V (TJ200F04M3L)
    • RDS(ON) = 2.4mΩ (max) @VGS = -10V (XPH3R114MC)
    • RDS(ON) = 3.6mΩ (typ.) @VGS = -10V (XPH4R714MC)
    • RDS(ON) = 4.0mΩ (typ.) @VGS = -10V (TJ80S04M3L)
    • RDS(ON) = 4.3mΩ (max) @VGS = -10V (TJ90S04M3L)
    • RDS(ON) = 4.8mΩ (typ.) @VGS = -10V (TJ60S04M3L)
    • RDS(ON) = 7.0mΩ (typ.) @VGS = -10V (TJ40S04M3L)
    • RDS(ON) = 7.4mΩ (typ.) @VGS = -10V (XPN9R614MC)
    • RDS(ON) = 8.6mΩ (typ.) @VGS = -10V (TJ60S06M3L)
    • RDS(ON) = 10.3mΩ (typ.) @VGS = -10V (TJ40S04M3L)
    • RDS(ON) = 16.8mΩ (typ.) @VGS = -10V (TJ30S06M3L)
    • RDS(ON) = 17mΩ (max) @VGS = -10V (TJ20S04M3L)
    • RDS(ON) = 33.8mΩ (typ.) @VGS = -10V (TJ10S04M3L)
    • RDS(ON) = 38.5mΩ (max) @VGS = -10V (TJ15S06M3L)
    • RDS(ON) = 80mΩ (typ.) @VGS = -10V (TJ8S06M3L)
  • Low gate drive voltage (-4.5V)
  • Narrow gate threshold voltage range of Vth= -1.0 to -2.0V (narrow: 1V range)
  • Low thermal resistance of Rth(ch-c)=0.83°C/W (max)
  • Tch=175°C channel temperature ratings 
  • Low switching noise

Applications

  • Load switches (replacement of mechanical relays)
  • Motor drives

Circuit Example

Toshiba Automotive U-MOSVI Power MOSFETs

Related Products

Toshiba Automotive N-/P-Channel SSMx MOSFETs

Covers various automotive applications in 12V to 48V battery systems.

Learn Moreacerca de Toshiba Automotive N-/P-Channel SSMx MOSFETs View Productsrelacionado con Toshiba Automotive N-/P-Channel SSMx MOSFETs

Toshiba Automotive U-MOSVII-H Power MOSFETs

AEC-Q101 qualified silicon N-channel MOSFETs offering low drain-source on-resistance.

Learn Moreacerca de Toshiba Automotive U-MOSVII-H Power MOSFETs View Productsrelacionado con Toshiba Automotive U-MOSVII-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs

40V N-channel power MOSFETs ideal for automotive applications.

Learn Moreacerca de Toshiba Automotive U-MOSIX-H Power MOSFETs View Productsrelacionado con Toshiba Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs

100V N-channel power MOSFETs ideal for automotive applications.

Learn Moreacerca de Toshiba Automotive U-MOSVIII-H Power MOSFETs View Productsrelacionado con Toshiba Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSX-H MOSFETs

AEC-Q101 qualified with low drain-source on-resistance.

Learn Moreacerca de Toshiba Automotive U-MOSX-H MOSFETs View Productsrelacionado con Toshiba Automotive U-MOSX-H MOSFETs

Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs

Silicon N-ch Power MOSFET that is AEC-Q101 qualified in a compact, thin TSON package.

Learn Moreacerca de Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs View Productsrelacionado con Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs
View Results ( 18 ) Page
Número de referencia Hoja de datos Empaquetado / Estuche Vds (Tensión separación drenador-fuente) Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Pd (disipación de potencia)
TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Hoja de datos TO-220SM-3 40 V 200 A 1.8 mOhms 375 W
TJ8S06M3L,LXHQ TJ8S06M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 60 V 8 A 104 mOhms 27 W
TJ60S04M3L,LXHQ TJ60S04M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 40 V 60 A 6.3 mOhms 90 W
TJ10S04M3L,LXHQ TJ10S04M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 40 V 10 A 44 mOhms 27 W
TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 40 V 80 A 5.2 mOhms 100 W
TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 40 V 40 A 9.1 mOhms 68 W
TJ15S06M3L,LXHQ TJ15S06M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 60 V 15 A 50 mOhms 41 W
TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 60 V 30 A 21.8 mOhms 68 W
SSM6J808R,LXHF SSM6J808R,LXHF Hoja de datos TSOP6F 40 V 7 A 48 mOhms 1.5 W
TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Hoja de datos DPAK-3 (TO-252-3) 40 V 20 A 22.2 mOhms 41 W
Publicado: 2020-04-29 | Actualizado: 2025-08-19