MACOM HEMT de GaN
Los HEMT (transistores de alta movilidad de electrones) de GaN (nitruro de galio) de Cree ofrecen una mayor densidad de potencia y anchos de banda más amplios en comparación con transistores de Si y GaAs. El GaN tiene propiedades superiores en comparación con el silicio o el arseniuro de galio, incluida una tensión de ruptura superior, mayor velocidad de desviación saturada de electrones y mayor conductividad térmica.
Características
- High efficiency
- High gain
- Wide bandwidth capabilities
- High breakdown voltage
- High saturated electron drift velocity
- High thermal conductivity
Aplicaciones
- 2-Way private radio
- Broadband amplifiers
- Cellular infrastructure
- Test instrumentation
- Class A and AB linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
- Satellite communications
- PTP communications links
- Marine radar
- Pleasure craft radar
- Port vessel traffic services
- High-efficiency amplifiers
Comparison Chart
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Publicado: 2014-07-17
| Actualizado: 2025-08-26