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STMicroelectronics N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

Features

  • MDmesh K6 technology
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Specifications

  • 800V minimum drain-source breakdown voltage
  • ±30V gate-source voltage
  • 5V/ns peak diode recovery voltage slope
  • 100A/µs peak diode recovery current slope
  • 120V/ns MOSFET dv/dt ruggedness
  • -55°C to 150°C operating junction temperature range

Applications

  • Notebook and AIO
  • Flyback converters
  • Adapters for tablets
  • LED lighting

Test Circuits

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs

Associated MOSFETs

STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET

High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology.

Learn Moreacerca de STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET View Productsrelacionado con STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET

Uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology.

Learn Moreacerca de STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET View Productsrelacionado con STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET

High voltage N-channel Power MOSFET featuring Zener protection and 100% avalanche.

Learn Moreacerca de STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET View Productsrelacionado con STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET

STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET

Based on MDmesh K6 technology offers an ultra-low gate charge and excellent RDS(on) x area.

Learn Moreacerca de STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET View Productsrelacionado con STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET

STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFET

Features an excellent RDS(on) x area and a low Qg, enabling high switching speeds and low losses.

Learn Moreacerca de STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFET View Productsrelacionado con STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET

Offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology.

Learn Moreacerca de STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET View Productsrelacionado con STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics Power MOSFETs

Broad range of breakdown voltages from -500V to 1500V.

Learn Moreacerca de STMicroelectronics Power MOSFETs

COMPLETE YOUR DESIGN

STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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View Results ( 12 ) Page
Número de referencia Hoja de datos Estilo de montaje Empaquetado / Estuche Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Qg (carga de compuertas) Pd (disipación de potencia) Modo canal Empaquetado Tiempo de caída Tiempo de establecimiento Tiempo típico de retraso de apagado Tiempo de retardo de conexión típico
STD80N340K6 STD80N340K6 Hoja de datos SMD/SMT DPAK-3 (TO-252-3) 12 A 340 mOhms 17.8 nC 92 W Enhancement Reel 11 ns 4.9 ns 34 ns 13 ns
STF80N240K6 STF80N240K6 Hoja de datos Through Hole TO-220FP-3 16 A 220 mOhms 25.9 nC 27 W Enhancement Tube 12 ns 5.3 ns 47.8 ns 16 ns
STF80N1K1K6 STF80N1K1K6 Hoja de datos Through Hole TO-220FP-3 5 A 1.1 Ohms 5.7 nC 21 W Enhancement Tube 14 ns 4.3 ns 22 ns 7.4 ns
STF80N600K6 STF80N600K6 Hoja de datos Through Hole TO-220FP-3 7 A 600 mOhms 10.7 nC 23 W Enhancement Tube 12.6 ns 4.1 ns 28.2 ns 9 ns
STD80N240K6 STD80N240K6 Hoja de datos SMD/SMT 16 A 220 Ohms 25.9 nC 105 W Enhancement Reel
STD80N450K6 STD80N450K6 Hoja de datos SMD/SMT DPAK-3 (TO-252-3) 10 A 450 mOhms 17.3 nC 83 W Enhancement Reel 12.7 ns 4 ns 28.8 ns 10.6 ns
STP80N1K1K6 STP80N1K1K6 Hoja de datos Tube
STP80N600K6 STP80N600K6 Hoja de datos Through Hole TO-220-3 7 A 600 mOhms 10.7 nC 86 W Enhancement Tube 12.6 ns 4.1 ns 28.2 ns 9 ns
STP80N450K6 STP80N450K6 Hoja de datos Through Hole TO-220-3 10 A 450 mOhms Enhancement Tube
STP80N240K6 STP80N240K6 Hoja de datos Through Hole TO-220-3 10 A 220 mOhms 25.9 nC 140 W Enhancement Tube 12 s 5.3 ns 47.8 ns 16 ns
Publicado: 2024-06-25 | Actualizado: 2026-01-21