Nuevo/a Transistores RF
Ampleon BLF981/BLF981S Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistors are 170W devices designed for high-efficiency broadband applications across a wide frequency range from HF to 1400MHz. These transistors are particularly well-suited for use in broadcast transmitters, industrial, scientific, medical (ISM), avionics, and other non-cellular communication systems. Built to withstand extreme operating conditions, the Ampleon BLF981/BLF981S offers excellent ruggedness, high power gain, and integrated dual-sided ESD protection. The devices are optimized for both analog and digital signal transmission, ensuring reliable performance and easy power control. The BLF981 is housed in a SOT467C package, while the BLF981S comes in a SOT467B package, both supporting robust thermal management and long-term reliability.
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Ampleon BLF981/BLF981S LDMOS Power TransistorsDesigned for high-efficiency broadband applications across a frequency range from HF to 1400MHz.15/05/2025
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Ampleon BLP981 LDMOS Power Transistor170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.15/05/2025 -
Mini-Circuits TAV1 TransistorsDesigned with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.01/12/2023 -
CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.09/07/2023 -
Nexperia SOT23 Surface-Mounted Package ProductsContained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package.26/07/2022 -
Nexperia SOT323 Surface-Mounted Package ProductsA plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package.26/07/2022 -
Qorvo pHEMT de GaAs discreto de 1600 µm QPD2160DProporciona 32,5 dBm de potencia de salida en P1dB, una ganancia de 10,4 dB y una eficiencia de potencia añadida del 63 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 1200 µm QPD2120DProporciona 31 dBm de potencia de salida en P1dB, una ganancia de 11,5 dB y una eficiencia de potencia añadida del 57 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 800 µm QPD2080DProporciona 29,5 dBm de potencia de salida en P1dB, una ganancia de 11,5 dB y una eficiencia de potencia añadida del 56 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 600 µm QPD2060DProporciona 28 dBm de potencia de salida en P1dB, una ganancia de 12 dB y una eficiencia de potencia añadida del 55 % a 1 dB.19/04/2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022