Nuevo/a Semiconductores discretos
Vishay General Semiconductor SE30CLJ Surface-Mount High Voltage Rectifiers are engineered for robust performance in demanding power conversion applications. Designed with an oxide planar chip junction and housed in the eCool SMPD package, the Vishay SE30CLJ rectifiers support efficient top‑side cooling and ensure a minimum creepage distance of 4.3mm, enhancing electrical safety. These devices offer a maximum average forward current of 30A and a repetitive peak reverse voltage of 600V, well‑suited for high‑power rectification.
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Vishay SE40CLJ Surface-Mount High Voltage RectifiersDesigned for demanding power conversion applications03/02/2026 -
Vishay SE30CLJ Surface-Mount High Voltage RectifiersEngineered for robust performance in demanding power conversion applications.03/02/2026
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Diotec Semiconductor BZX84B3V6 SMD Planar Zener DiodeOffers a sharp zener voltage breakdown and a low leakage current.03/02/2026 -
Vishay High Current Density/Voltage Schottky RectifiersDelivers robust performance for demanding power‑conversion applications.03/02/2026 -
Vishay Power Silicon Carbide Schottky DiodesDelivers exceptional efficiency, ruggedness, and reliability in demanding power‑electronics apps.03/02/2026 -
IXYS X4-Class Power MOSFETsOffer low on-state resistance and conduction losses, with improved efficiency.02/02/2026 -
IXYS Diodos de alta tensión y recuperación rápida DP600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.20/01/2026 -
Qorvo QPD1014A GaN Input Matched Transistors15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.20/01/2026 -
Qorvo QPD1011A GaN Input Matched Transistors7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.19/01/2026 -
Qorvo QPD1004A GaN Input Matched Transistors25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.19/01/2026 -
Littelfuse Diodos de alta fiabilidad SM15KPA-HRA y SM30KPA-HRAProtects I/O interfaces, VCC bus, and other circuits in avionics, aviation, and eVTOL applications.13/01/2026 -
Littelfuse Diodos TVS SP432x-01WTGProvide ultra-low capacitance, bidirectional, and a high level of protection.08/01/2026 -
onsemi NVBYST0D6N08X 80V N-Channel Power MOSFETThis device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.26/12/2025 -
Infineon Technologies OptiMOS™ 6 80V Power MOSFETsSets industry benchmark performance with a wide portfolio offering.23/12/2025 -
onsemi NVMFD5877NL Dual N-Channel MOSFETDesigned for compact and efficient designs including high thermal performance.19/12/2025 -
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.19/12/2025 -
onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.04/12/2025 -
STMicroelectronics SGT080R70ILB E-Mode PowerGaN TransistorE-Mode PowerGaN transistor designed for high-efficiency power conversion applications.04/12/2025 -
Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete TransistorsDTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.01/12/2025 -
onsemi FDC642P-F085 Small Signal MOSFETOffers a high-performance trench technology for extremely low RDS(on) and fast switching speed.25/11/2025 -
onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFETBuilt using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.25/11/2025 -
Diotec Semiconductor LDP02-26CAYD2-AQ SMD TVS DiodeOffers 6600 W peak power, fast response, and ISO-16750-2 load-dump test compliance.24/11/2025 -
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETsDesigned for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.24/11/2025 -
Bourns SMLJ-R Transient Voltage Suppressor DiodesDesigned for surge and ESD protection in compact chip package DO-214AB (SMC) size format.24/11/2025 -
onsemi NVD5867NL Single N-Channel Power MOSFETFeatures 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.20/11/2025