onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs
onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs are optimized for fast switching applications. The planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The onsemi M3S 1200V MOSFETs provide optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The M3S offers low switching losses and is housed in a TO247-4LD package for low common source inductance.
Features
- TO247-4LD package for low common source inductance
- 15V to 18V Gate drive
- M3S technology of 22mohm RDS(ON) with low EON and EOFF losses
- 100% Avalanche tested
- Reduced EON losses
- 18V for best performance; 15V for compatibility with IGBT driver circuits
- Improved power density
- Improved robustness to unexpected incoming voltage spikes or ringing
Applications
- AC-DC Conversion
- DC-AC Conversion
- DC-DC Conversion
- UPS
- Electric vehicle chargers
- Solar inverters
- Energy storage systems
Related Products
onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET
Optimized for fast switching applications and features a low 22mΩ drain-to-source on-resistance.
onsemi MOSFET de carburo de silicio (SiC) NTH4L022N120M3S
Forman una familia de MOSFET SiC planos M3S de 1200 V.
Evaluation Board
onsemi EVBUM2878G-EVB Evaluation Board
Designed for evaluating 1200V M3S full-bridge 4-PACK modules in the F2 package.
onsemi EVBUM2880G-EVB Evaluation Board
Designed to evaluate 1200V M3S Half-Bridge 2-PACK modules in the F1 package.
Internal Circuit Diagram
View Results ( 2 ) Page
| Número de referencia | Hoja de datos | Vds (Tensión separación drenador-fuente) | Rds encendido (drenaje de la fuente en resistencia) | Id: corriente de drenaje continuo | Empaquetado / Estuche |
|---|---|---|---|---|---|
| NTH4L022N120M3S |  |
1.2 kV | 30 mOhms | 68 A | TO-247-4 |
| NVH4L022N120M3S | |
1.2 kV | 30 mOhms | 68 A | TO-247-4 |
Publicado: 2021-09-27
| Actualizado: 2025-01-20