Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs
Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOMoss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.Features
- Very low on-resistance RDS(on)
- Superior thermal resistance
- Optimized for hard/soft‑switching topologies
- Optimized for FOMoss
- 100% avalanche tested
- Halogen‑free according to IEC61249‑2‑21
- Pb‑free lead plating
- RoHS compliant
View Results ( 9 ) Page
| Número de referencia | Hoja de datos | Tiempo de caída | Transconductancia delantera: mín. | Id: corriente de drenaje continuo | Pd (disipación de potencia) | Qg (carga de compuertas) | Rds encendido (drenaje de la fuente en resistencia) | Tiempo de establecimiento | Vgs (tensión de compuerta-fuente) | Vgs th (tensión umbral compuerta-fuente) | Tiempo típico de retraso de apagado | Tiempo de retardo de conexión típico |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IQEH64NE2LM7UCGSCATMA1 | ![]() |
3.6 ns | 50 S | 348 A | 130 W | 22 nC | 640 uOhms | 1.6 ns | 16 V | 2 V | 25.5 ns | 6.2 ns |
| IQEH50NE2LM7ZCGATMA1 | ![]() |
5.2 ns | 100 S | 422 A | 150 W | 29 nC | 500 uOhms | 2 ns | 12 V | 1.7 V | 35 ns | 5.9 ns |
| IQEH54NE2LM7UCGATMA1 | ![]() |
4.4 ns | 55 S | 406 A | 150 W | 27 nC | 540 uOhms | 2 ns | 16 V | 2 V | 29 ns | 7 ns |
| IQEH46NE2LM7ZCGSCATMA1 | ![]() |
5.2 ns | 100 S | 430 A | 150 W | 29 nC | 480 uOhms | 2 ns | 12 V | 1.7 V | 35 ns | 5.9 ns |
| IQEH50NE2LM7UCGSCATMA1 | ![]() |
4.4 ns | 110 S | 298 A | 150 W | 27 nC | 500 uOhms | 2 ns | 16 V | 2 V | 29 ns | 7 ns |
| IQEH68NE2LM7UCGATMA1 | ![]() |
5.1 ns | 50 S | 338 A | 130 W | 22 nC | 680 uOhms | 17 ns | 16 V | 2 V | 24 ns | 7.7 ns |
| IQEH80NE2LM7UCGSCATMA1 | ![]() |
2.7 ns | 50 S | 282 A | 107 W | 17.2 nC | 800 uOhms | 1.4 ns | 16 V | 2 V | 20.1 ns | 5.4 ns |
| IQEH84NE2LM7UCGATMA1 | ![]() |
2.4 ns | 50 S | 275 A | 107 W | 17.2 nC | 840 uOhms | 3 ns | 16 V | 2 V | 18 ns | 5.1 ns |
| ISC019N08NM7ATMA1 | ![]() |
7.5 ns | 70 S | 209 A | 188 W | 60 nC | 1.9 mOhms | 5.3 ns | 20 V | 3.2 V | 28 ns | 11 ns |
Publicado: 2025-09-24
| Actualizado: 2025-11-03

