ROHM Semiconductor RS6N120BH N-Channel Power MOSFET
ROHM Semiconductor RS6N120BH N-Channel Power MOSFET is a compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation. The system increases current capacity while reducing package resistance. This feature makes the RS6N120BH ideal for drive applications that operate on 24V/36V/48V power supplies.
Features
- Ideal for switching applications
- High power 5mm x 6mm x 1mm HSOP8S Cu clip package
- Simultaneous low ON-resistance and gate charge capacitance (trade-off relationship) minimizes energy loss
- Surface mount
- Enhancement mode
- Lead-free plating
- 100% Rg and UIS tested
- Halogen-free and RoHS compliant
Applications
- Switching applications
- Power supplies for servers and base stations
- Various motor-driven equipment (industrial/consumer)
Specifications
- 8x terminals
- 80V drain-source breakdown voltage
- 58mV/°C typical breakdown voltage temperature coefficient
- ±135A continuous drain current
- ±540A pulsed drain current
- ±20V gate-source voltage
- 33nC to 53nC typical total gate charge range
- 1.3Ω typical gate resistance
- 104W power dissipation
- 6V drive voltage
- 1.2V maximum forward voltage
- 5µA maximum zero gate voltage drain current
- 30A single pulse avalanche current
- 74mJ single pulse avalanche energy
- 42S minimum forward transfer admittance
- 3420pF typical input capacitance
- 1020pF typical output capacitance
- 35pF typical reverse transfer capacitance
- 32ns typical turn-on delay time
- 47ns typical rise time
- 73ns typical turn-off delay time
- 35ns typical fall time
- -55°C to +150°C operating temperature range
Inner Circuit
Structure Comparison
Additional Resources
Publicado: 2023-05-15
| Actualizado: 2023-05-19