ROHM Semiconductor RF4G100BG N-Channel Power MOSFET
ROHM Semiconductor RF4G100BG N-Channel Power MOSFET is a 40V, 10A MOSFET featuring a low 14.2mΩ on-resistance, making it ideal for switching applications. The RF4G100BG has a 27ns (typical) reverse recovery time and an 18nC (typical) reverse recovery charge. Power dissipation for the device is 2.0W, and it features a wide -55℃ to +150℃ operating junction and storage temperature range.
The ROHM Semiconductor RF4G100BG N-Channel Power MOSFET is available in a high-power, small-mold 2.0mm x 2.0mm DFN2020-8S (HUML2020L8) package ideal for space-constrained applications.
Features
- Low 14.2mΩ on-resistance (RDS(ON))
- 40V drain-source voltage (VDSS)
- ±10A continuous drain current (ID)
- +40A pulsed drain current (IDP)
- +20V gate-source voltage (VGSS)
- 10A avalanche current, single pulse (IAS)
- 8.4mJ avalanche energy, single pulse (EAS)
- 2.0W power dissipation (PD)
- 27ns reverse recovery time (trr)
- 18nC reverse recovery charge (Qrr)
- -55℃ to +150℃ operating junction and storage temperature range
- 2.0mm x 2.0mm DFN2020-8S (HUML2020L8) package
- Pb-free plating
- Halogen-free and RoHS compliant
Applications
- Switching
Related Products
ROHM Semiconductor RF4L070BG N-Channel Power MOSFET
60V, 7A MOSFET featuring a low 27mΩ on-resistance, making it ideal for switching applications.
Pin Designations & Inner Circuit
Package Outline
Publicado: 2021-11-29
| Actualizado: 2022-03-11