STMicroelectronics RF5L15120CB4 RF Power LDMOS Transistor
STMicroelectronics RF5L15120CB4 RF Power LDMOS Transistor features high efficiency and linear gain operations. The RF5L15120CB4 120W LDMOS FET provides a significant positive and negative gate/source voltage range. The device can be used in class AB/B and class C for all typical modulation formats.
The STM RF5L15120CB4 RF Power LDMOS transistor is intended for broadband commercial communications, TV Broadcast, Avionics, and industrial applications with an HF to 1.5GHz frequency.
Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate/source voltage range
- Excellent thermal stability, low HCI drift
- In compliance with the European directive 2002/95/EC
Applications
- Broadband commercial communications
- TV broadcast
- Avionics
- Industrial
Specifications
- 95V Drain-source voltage
- -8V/+10V Gate-source voltage
- 55V Maximum operating voltage
- +200°C Maximum junction temperature
- -65°C to +150°C Storage temperature range
Pin connection
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Publicado: 2022-12-02
| Actualizado: 2022-12-12