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SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

Features

  • High-speed switching SiC MOSFETs
  • Reliable body diode
  • All parts tested to above 1350V
  • Direct mounting to the heatsink (isolated package)
  • 175°C junction temperature
  • Kelvin reference for stable operation
  • Low switching losses
  • Low junction to case thermal resistance
  • Very rugged and easy mounting
  • RoHS-compliant

Applications

  • Photovoltaic inverter
  • Battery charger
  • Energy storage system
  • High voltage DC-to-DC converter

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View Results ( 9 ) Page
Número de referencia Hoja de datos Polaridad de transistor Tiempo de caída Id: corriente de drenaje continuo Pd (disipación de potencia) Rds encendido (drenaje de la fuente en resistencia) Tiempo de establecimiento Tiempo típico de retraso de apagado Tiempo de retardo de conexión típico Vds (Tensión separación drenador-fuente) Vgs th (tensión umbral compuerta-fuente)
GCMX040A120B3H1P GCMX040A120B3H1P Hoja de datos N-Channel 12 ns 53 A 208 W 38 mOhms 6 ns 25 ns 16 ns 1.2 kV 1.8 V
GCMX080A120B2H1P GCMX080A120B2H1P Hoja de datos N-Channel 4 ns 27 A 119 W 77 mOhms 3 ns 18 ns 10 ns 1.2 kV 1.8 V
GCMX010A120B3H1P GCMX010A120B3H1P Hoja de datos N-Channel 15 ns 201 A 600 W 8.9 mOhms 9 ns 50 ns 32 ns 1.2 kV 4 V
GCMX020A120B2H1P GCMX020A120B2H1P Hoja de datos N-Channel 16 ns 102 A 333 W 18 mOhms 6 ns 44 ns 23 ns 1.2 kV 1.8 V
GCMX020A120B2H2P GCMX020A120B2H2P Hoja de datos N-Channel 16 ns 102 A 333 W 28 mOhms 8 ns 48 ns 25 ns 1.2 kV 4 V
GCMX020A120B3H1P GCMX020A120B3H1P Hoja de datos N-Channel 18 ns 93 A 300 W 18.1 mOhms 10 ns 46 ns 26 ns 1.2 kV 1.8 V
GCMX040A120B2H1P GCMX040A120B2H1P Hoja de datos N-Channel 13 ns 56 A 217 W 38 mOhms 5 ns 26 ns 16 ns 1.2 kV 1.8 V
GCMX040A120B2H2P GCMX040A120B2H2P Hoja de datos N-Channel 11 ns 56 A 217 W 52 mOhms 7 ns 29 ns 16 ns 1.2 kV 4 V
GCMX080A120B2H2P GCMX080A120B2H2P Hoja de datos N-Channel 12 ns 27 A 119 W 100 mOhms 5 ns 22 ns 11 ns 1.2 kV 4 V
Publicado: 2024-03-01 | Actualizado: 2025-05-27