Volver a ROHM Semiconductor

ROHM Semiconductor RQxAT P-Channel MOSFETs

ROHM Semiconductor RQxAT P-Channel features surface mount packaging with low ON resistance and are 100% Rg and UIS tested. These P-channel MOSFETs offer a gate-source voltage of ±20V. The RQ3N025AT and RQ5L030AT MOSFETs feature a maximum drain-source ON resistance of 240mΩ and 99mΩ, respectively. These P-channel MOSFETs are RoHS compliant and halogen-free. The RQ3N025AT and RQ5L030AT MOSFETs offer a drain-source voltage of -80V and -60V, respectively. These P-channel MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching and motor drives.

Features

  • Low ON resistance
  • High power small mold package (HSMT8) (RQ3N025AT)
  • Small Surface Mount package (TSMT3) (RQ5L030AT)
  • Pb-free plating
  • RoHS compliant
  • Halogen free
  • 100% Rg and UIS tested

Applications

  • Switching
  • Motor drives
View Results ( 2 ) Page
Número de referencia Hoja de datos Tiempo de caída Transconductancia delantera: mín. Id: corriente de drenaje continuo Pd (disipación de potencia) Qg (carga de compuertas) Rds encendido (drenaje de la fuente en resistencia) Tiempo de establecimiento Temperatura operativa mínima Temperatura operativa máxima
RQ3N025ATTB1 RQ3N025ATTB1 Hoja de datos 15 ns 2.4 S 7 A 14 W 13 nC 240 mOhms 6.4 ns - 55 C + 150 C
RQ5L030ATTCL RQ5L030ATTCL Hoja de datos 31 ns 4 S 3 A 1 W 17.2 nC 99 mOhms 17 ns - 55 C + 150 C
Publicado: 2025-07-30 | Actualizado: 2025-08-21