ROHM Semiconductor RQ3xFRATCB Power MOSFETs
ROHM Semiconductor RQ3xFRATCB Power MOSFETs are AEC-Q101-qualified, automotive-grade MOSFETs. These MOSFETs feature -40V to 100V drain-source voltage range, 8 terminals, up to 69W power dissipation, and ±12A to ±27A continuous drain current. The RQ3xFRATCB power MOSFETs are available in N-channel and P-channel. These power MOSFETs come in a small 3.3mm x 3.3mm HSMT8AG package. The RQ3xFRATCB power MOSFETs are ideal for Advanced Driver Assistance Systems (ADAS), infotainment, lighting, and body.
Features
- AEC-Q101 qualified
- Small and high-powered package
- Realization of high mounting reliability by the original terminal and plating treatment
- Available in N-channel and P-channel
- 3.3mm x 3.3mm (t=0.8) size
- HSMT8AG package
Applications
- Advanced Driver Assistance Systems (ADAS)
- Infotainment
- Lighting
- Body
View Results ( 3 ) Page
| Número de referencia | Hoja de datos | Polaridad de transistor | Número de canales | Vds (Tensión separación drenador-fuente) | Id: corriente de drenaje continuo | Rds encendido (drenaje de la fuente en resistencia) | Qg (carga de compuertas) | Vgs th (tensión umbral compuerta-fuente) | Pd (disipación de potencia) | Tiempo de caída | Transconductancia delantera: mín. | Tiempo de establecimiento | Tiempo típico de retraso de apagado | Tiempo de retardo de conexión típico |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RQ3G270BJFRATCB |  |
P-Channel | 1 Channel | 40 V | 27 A | 22 mOhms | 32 nC | 2.5 V | 69 W | 37 ns | 11 S | 15 ns | 126 ns | 10 ns |
| RQ3G120BJFRATCB | |
P-Channel | 1 Channel | 40 V | 12 A | 48 mOhms | 15.5 nC | 2.5 V | 40 W | 9.8 ns | 6.5 S | 4.7 ns | 36 ns | 6.7 ns |
| RQ3L120BJFRATCB | |
P-Channel | 1 Channel | 60 V | 12 A | 106 mOhms | 15.7 nC | 2.5 V | 40 W | 18 ns | 7.8 S | 13 ns | 52 ns | 8.7 ns |
Publicado: 2024-05-22
| Actualizado: 2024-06-11