Volver a ROHM Semiconductor

ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET

ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET is a -60V drain-source voltage (VDSS) and ±36A continuous drain current (ID) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [RDS(ON)] is 41mΩ (max.) (VGS = -10V, ID = -20A) and comes in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7L04CBJFRA MOSFET is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Features

  • Wettable flanks product
  • AEC-Q101 qualified
  • 100% avalanche tested

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 41mΩ (max.) (VGS = -10V, ID = -20A)
    • 47mΩ (max.) (VGS = -4.5V, ID = -10A)
  • 62W power dissipation (PD)
  • Total gate charge (Qg)
    • 35.0nC (typ.) (VDD = -30V, ID = -10A, VGS = -10V)
    • 16.0nC (typ.) (VDD = -30V, ID = -10A, VGS = -4.5V)
  • +175°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET

Package Diagram

Mechanical Drawing - ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET
Publicado: 2025-07-25 | Actualizado: 2025-08-19