Nuevo/a Transistores RF JFET
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.09/07/2023
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Qorvo pHEMT de GaAs discreto de 1600 µm QPD2160DProporciona 32,5 dBm de potencia de salida en P1dB, una ganancia de 10,4 dB y una eficiencia de potencia añadida del 63 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 1200 µm QPD2120DProporciona 31 dBm de potencia de salida en P1dB, una ganancia de 11,5 dB y una eficiencia de potencia añadida del 57 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 800 µm QPD2080DProporciona 29,5 dBm de potencia de salida en P1dB, una ganancia de 11,5 dB y una eficiencia de potencia añadida del 56 % a 1 dB.19/04/2022 -
Qorvo pHEMT de GaAs discreto de 600 µm QPD2060DProporciona 28 dBm de potencia de salida en P1dB, una ganancia de 12 dB y una eficiencia de potencia añadida del 55 % a 1 dB.19/04/2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.14/02/2022