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PANJIT MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.

Features

  • NPN Silicon, planar design
  • Collector-emitter voltage VCE = 160V
  • Collector current IC = 600mA
  • MMBT5551W-AU is AEC­Q101 qualified
  • Lead-free in compliance with EU RoHS 2.0
  • Green molding compound as per IEC 61249 standard

Applications

  • Amplifiers
  • Switching circuits
  • Signal processing
  • Power management
  • Voltage regulation
  • Low- to medium-power electronic devices

Dimensions

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors
View Results ( 2 ) Page
Número de referencia Hoja de datos Descripción
MMBT5551W-AU_R1_007A1 MMBT5551W-AU_R1_007A1 Hoja de datos Transistores bipolares - BJT NPN HIGH VOLTAGE TRANSISTOR,AEC-Q101 qualified
MMBT5551W_R1_00701 MMBT5551W_R1_00701 Hoja de datos Transistores bipolares - BJT NPN HIGH VOLTAGE TRANSISTOR
Publicado: 2023-10-31 | Actualizado: 2023-11-09