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onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET

onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET is a high-efficiency device designed for demanding power management applications. Housed in a compact 5mm x 6mm PowerFLAT package, the NVMFS4C03NWFET1G delivers excellent thermal performance and low RDS(on), as low as 0.9mΩ at 10V, making the MOSFET ideal for minimizing conduction losses in high-current circuits. This onsemi MOSFET supports fast switching speeds and is optimized for use in DC-DC converters, synchronous rectification, load switching, and motor control applications. A robust design and high avalanche energy rating make the NVMFS4C03NWFET1G suitable for use in telecom, server, and industrial power systems where reliability and efficiency are critical. The NVMFS4C03NWFET1G offers a balance of performance, size, and ruggedness, making it a versatile choice for modern power electronics.

Features

  • Small 5mm x 6mm footprint for compact designs
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Wettable flanks for enhanced optical inspection
  • AEC-Q101 qualified and PPAP capable
  • Lead-free and Halogen-free/BFR-free
  • RoHS compliant

Applications

  • DC-DC converters
  • Synchronous rectification
  • Load switching
  • Motor control
  • Telecom power systems
  • Server and data center power management
  • Battery Management Systems (BMS)

Specifications

  • 30V maximum drain-to-source voltage
  • ±20V maximum gate-to-source voltage
  • 34.9A to 159A maximum continuous drain current range
  • 3.71W to 77W maximum power dissipation range
  • 900A maximum pulsed drain current
  • 64A maximum body diode source current
  • 549mJ maximum single pulse drain-to-source avalanche energy
  • SO-8 FL package
  • Maximum drain-to-source on-resistance
    • 1.7mΩ at 10V
    • 2.4mΩ at 4.5V
  • -55°C to +175°C operating junction temperature range
  • +260°C maximum soldering lead temperature
  • Maximum thermal resistance
    • 1.95°C/W junction-to-case, steady state
    • 40°C/W junction-to-ambient, steady state
Publicado: 2025-06-02 | Actualizado: 2025-06-23