Volver a Diodes Incorporated

Diodes Incorporated DMTH6005 N-Channel Enhancement Mode MOSFETs

Diodes Inc. DMTH6005 N-channel Enhance Mode MOSFETs minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The DMTH6005 MOSFETs offer a maximum of 5.5mΩ @ VGS = 10V RDS(ON), a drain-source breakdown voltage of 60V, and 100% unclamped inductive switching. Rated at 175ºC, these MOSFETs are ideal for high ambient temperature environments. DMTH6005LPSQ is automotive qualified to AEC-Q101 and supports PPAP. Applications for the DMTH6005 MOSFETs include high-frequency switching, synchronous rectification, and DC-DC converters.

Features

  • Rated to +175ºC – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – ensures more reliable and robust end application
  • Low RDS(ON) – minimizes power losses
  • Low Qg – minimizes switching losses
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability (DMTH6005LPSQ)
  • PPAP Capable (DMTH6005LPSQ)
  • Case: POWERDI® 5060-8 
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.097 grams (Approximate)

Applications

  • High-frequency Switching
  • Sync. Rectification
  • DC-DC Converters

POWERDI®5060-8 Case

Diodes Incorporated DMTH6005 N-Channel Enhancement Mode MOSFETs
Publicado: 2017-03-27 | Actualizado: 2022-03-11