Diodes Incorporated DMT3006LFDF-7 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMT3006LFDF-7 MOSFET is a 30V N-Channel Enhancement-Mode MOSFET designed with a 0.6mm profile and 4mm² footprint. Qualified to AEC-Q101 Standards for High Reliability, the DMT3006LFDF-7 MOSFET minimizes on-state resistance while maintaining excellent switching performance. The MOSFET offers a 5.8mΩ to 15mΩ on-state resistance, 1V to 3V gate threshold voltage, 12.5A to 14.1A continuous drain current, and 2.1W power dissipation. Switching performance includes a 4.6ns turn-off fall time, 5.5ns turn-on rise time, a typical 13.5ns turn-off delay time, a typical 3.5ns turn-on delay time, and 19.3 reverse recovery time. The 30V DMT3006LFDF-7 N-Channel Enhancement-Mode MOSFET design makes the device ideal for high-efficiency power-management applications.