Infineon Technologies CoolGaN™ Gallium Nitride e-mode HEMTs
Infineon CoolGaN™ Gallium Nitride e-mode HEMTs offer excellent advantages, including ultimate efficiency, reliability, power density, and high quality over silicon. CoolGaN is a high-performance transistor technology for power conversion in the voltage range of up to 600V. The lateral transistor structure of CoolGAN features a very low gate and output charge, fast switching, and no body diode or reverse recovery charge. These characteristics result in the transistors being used to design very high-efficiency and high-frequency power-conversion circuits. Infineon’s CoolGaN is made with a self-clamping p-gate structure.
Infineon CoolGaN quality is ideal for hard and soft switching topologies, resulting in record efficiency (>99%) with a potential for BOM savings. CoolGaN enables the adaptation of simpler half-bridge topologies for PFC, including the elimination of the lossy input bridge rectifier. Gallium nitride (GaN) provides a higher critical electrical field making it ideal for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs. This enables high-speed switching.
Features
- Fgure of merits of 600V power devices
- Excellent for hard and soft switching topologies
- Triple increase in power density is achievable
- Optimized for turn-on and turn-off
- Fast (and nearly lossless) switching
- High power density enables small and light designs
- Technology for innovative solutions and high volumes
- Very low RDS(on) and large cost-down potential
- High efficiency for SMPS
- Zero reverse recovery charge
- Compared to Si technology:
- 10x higher breakdown field and 2x higher mobility
- 10x lower output charge
- 10x lower gate charge and linear Coss characteristic
- Surface mount packaging ensures that switching capabilities of GaN are fully accessed
- Easy-to-use with a compelling driver IC portfolio
Applications
- Server
- Telecom
- Hyperscale Datacenter
- Wireless charging
- SMPS (Switched Mode Power Supply)
- Adapter and Charger
Videos
FB Totem Pole Diagram
4 Pillars of Success
Qualification Diagram
SMPS Diagram
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Evaluation Boards
Infineon Technologies EVAL_AUDAMP24 Evaluation Board
225W/ch or 250W/ch half-bridge class D audio power amplifier for Hi-Fi audio systems.
Product Briefs
Related HEMTs
Infineon Technologies CoolGaN™ 600V GIT HEMTs
GaN enhancement-mode transistors with fast turn-on/turn-off speeds at minimum switching losses.
Infineon Technologies CoolGan™ 600V e-Mode Power Transistors
Enables simpler half-bridge topologies with fast turn-on and turn-off speeds.
Infineon Technologies CoolGaN™ Integrated Power Stages (IPS)
Combines a half-bridge power stage with 2 enhancement mode CoolGaN HEMTs, in a small QFN-28 package.
Infineon Technologies 700V CoolGaN™ G4 Power Transistors
Designed with low Rth(j-c) for high-power applications and highly efficient power switching.