HMC7229LS6 1W Power Amplifier

Analog Devices HMC7229LS6 is designed as a four-stage GaAs pHEMT MMIC 1W power amplifier. The HMC7229LS6 features an integrated, temperature-compensated 37 to 40GHz on-chip power detector. Operating from a 6V supply, the HMC7229LS6 amplifier provides 24dB gain and +32dBm saturated output power at 18% PAE. With an excellent 40dBm IP3, the HMC7229LS6 is well-suited for linear applications. Applications include high-capacity, point-to-point or multi-point radios as well as VSAT/SATCOM applications requiring 32dBm of efficient saturated output power. For ease of integration in higher-level assemblies, the RF I/Os are internally matched at 50Ω and DC blocked. The power amplifier is available in ceramic, high frequency, air cavity 6x6mm package. The package exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.

Resultados: 2
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Frecuencia de operación Voltaje operativo de suministro Corriente de suministro operativa Ganancia Tipo Estilo de montaje Empaquetado / Estuche Tecnología P1dB - Punto de compresión OIP3 - Interceptación de tercer pedido Temperatura operativa mínima Temperatura operativa máxima Serie Empaquetado
Analog Devices Amplificador de RF 37-40GHz 1W PA
76En existencias
Mín.: 1
Múlt.: 1
Bobina: 100

37 GHz to 40 GHz 6 V 1.2 A 24 dB Power Amplifiers SMD/SMT GaAs 31.5 dBm 40 dBm - 40 C + 85 C HMC7229 Reel, Cut Tape, MouseReel
Analog Devices Amplificador de RF 37-40GHz 1W PA
1En existencias
Mín.: 1
Múlt.: 1

37 GHz to 40 GHz 6 V 1.2 A 24 dB Power Amplifiers SMD/SMT LS6-16 GaAs 31.5 dBm 40 dBm - 40 C + 85 C HMC7229 Cut Tape