650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Resultados: 28
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Tecnología Empaquetado / Estuche Estilo de montaje Configuración Voltaje colector-emisor VCEO máx. Voltaje de saturación colector-emisor Voltaje puerta-emisor máximo Corriente continua del colector a 25 C Pd (disipación de potencia) Temperatura operativa mínima Temperatura operativa máxima Serie Empaquetado
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package 368En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 293En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package 721En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package 961En existencias
Mín.: 1
Múlt.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package 358En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 435En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 700En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 332En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package No en almacén Plazo producción 19 Semanas
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 23En existencias
720Fecha prevista: 26/03/2026
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package 115En existencias
240Fecha prevista: 23/02/2026
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package 362En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package 199En existencias
240Fecha prevista: 09/07/2026
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 427 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package 222En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package 232En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package 202En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package 84En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package 208En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 100 A IGBT with anti-parallel diode in TO247-4 package 229En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 429 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package 337En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package 71En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package 97En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package 110En existencias
Mín.: 1
Múlt.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package 68En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 82En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube