650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Resultados: 28
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Tecnología Empaquetado / Estuche Estilo de montaje Configuración Voltaje colector-emisor VCEO máx. Voltaje de saturación colector-emisor Voltaje puerta-emisor máximo Corriente continua del colector a 25 C Pd (disipación de potencia) Temperatura operativa mínima Temperatura operativa máxima Serie Empaquetado
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 417En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 640En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package 347En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package 198En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 285En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package 348En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package 420En existencias
480Fecha prevista: 08/10/2026
Mín.: 1
Múlt.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 747En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package 318En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package 350En existencias
Mín.: 1
Múlt.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package No en almacén Plazo producción 26 Semanas
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package 330En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package 201En existencias
240Fecha prevista: 09/07/2026
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package 232En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package 162En existencias
240Fecha prevista: 20/08/2026
Mín.: 1
Múlt.: 1
Máx.: 20

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package 35En existencias
240Fecha prevista: 01/10/2026
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package 317En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package 97En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 82En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 149En existencias
240Fecha prevista: 28/01/2027
Mín.: 1
Múlt.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package 187En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package 27En existencias
240Fecha prevista: 17/09/2026
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package 6En existencias
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package 28En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
2.640Pedido
Mín.: 1
Múlt.: 1

- 20 V, 20 V IGBT7 H7 Tube