|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
17,40 €
-
362En existencias
|
N.º Ref. Mouser
511-SCT020W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362En existencias
|
|
|
17,40 €
|
|
|
10,88 €
|
|
|
9,45 €
|
|
|
9,40 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
10,87 €
-
308En existencias
-
1.200Fecha prevista: 10/08/2026
|
N.º Ref. Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
308En existencias
1.200Fecha prevista: 10/08/2026
|
|
|
10,87 €
|
|
|
9,10 €
|
|
|
6,87 €
|
|
|
6,14 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
10,49 €
-
79En existencias
|
N.º Ref. Mouser
511-SCT070H120G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
79En existencias
|
|
|
10,49 €
|
|
|
7,33 €
|
|
|
6,30 €
|
|
|
5,88 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
12,15 €
-
1.199Fecha prevista: 02/07/2026
|
N.º Ref. Mouser
511-SCT070HU120G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
1.199Fecha prevista: 02/07/2026
|
|
|
12,15 €
|
|
|
8,80 €
|
|
|
7,28 €
|
|
|
6,79 €
|
|
Mín.: 1
Múlt.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
9,43 €
-
No en almacén Plazo producción 22 Semanas
-
Nuevo producto
|
N.º Ref. Mouser
511-SCT070W120G3-4
Nuevo producto
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
No en almacén Plazo producción 22 Semanas
|
|
|
9,43 €
|
|
|
5,62 €
|
|
|
5,10 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
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