|
|
MOSFET de SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
20,28 €
-
735En existencias
-
NRND
|
N.º Ref. Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SIC_DISCRETE
|
|
735En existencias
|
|
|
20,28 €
|
|
|
16,31 €
|
|
|
14,29 €
|
|
|
14,04 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
6,06 €
-
365En existencias
|
N.º Ref. Mouser
726-IMW120R140M1HXKS
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
365En existencias
|
|
|
6,06 €
|
|
|
4,12 €
|
|
|
3,41 €
|
|
|
3,26 €
|
|
|
3,16 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
13,95 €
-
1.234En existencias
-
NRND
|
N.º Ref. Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
1.234En existencias
|
|
|
13,95 €
|
|
|
10,63 €
|
|
|
8,86 €
|
|
|
7,89 €
|
|
|
7,46 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
9,57 €
-
27En existencias
-
240Pedido
-
NRND
|
N.º Ref. Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
27En existencias
240Pedido
|
|
|
9,57 €
|
|
|
6,77 €
|
|
|
5,64 €
|
|
|
5,01 €
|
|
|
4,76 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
5,19 €
-
10.930Fecha prevista: 26/08/2026
|
N.º Ref. Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10.930Fecha prevista: 26/08/2026
|
|
|
5,19 €
|
|
|
3,41 €
|
|
|
2,50 €
|
|
|
2,23 €
|
|
|
1,98 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
15,84 €
-
2.160Pedido
|
N.º Ref. Mouser
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2.160Pedido
Pedido:
720 Fecha prevista: 20/08/2026
Plazo de producción de fábrica:
45 Semanas
|
|
|
15,84 €
|
|
|
10,47 €
|
|
|
9,05 €
|
|
|
8,80 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
8,15 €
-
No en almacén Plazo producción 52 Semanas
-
NRND
|
N.º Ref. Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
No en almacén Plazo producción 52 Semanas
|
|
|
8,15 €
|
|
|
5,74 €
|
|
|
4,64 €
|
|
|
4,13 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
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