|
|
MOSFET de SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
17,47 €
-
830En existencias
-
NRND
|
N.º Ref. Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SIC_DISCRETE
|
|
830En existencias
|
|
|
17,47 €
|
|
|
12,66 €
|
|
|
12,60 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
13,20 €
-
238En existencias
|
N.º Ref. Mouser
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
238En existencias
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
12,67 €
-
1.300En existencias
-
NRND
|
N.º Ref. Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
1.300En existencias
|
|
|
12,67 €
|
|
|
9,67 €
|
|
|
7,65 €
|
|
|
7,09 €
|
|
|
6,90 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
6,21 €
-
388En existencias
|
N.º Ref. Mouser
726-IMW120R140M1HXKS
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
388En existencias
|
|
|
6,21 €
|
|
|
4,02 €
|
|
|
3,37 €
|
|
|
3,12 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
8,82 €
-
29En existencias
-
240Fecha prevista: 29/04/2027
-
NRND
|
N.º Ref. Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
29En existencias
240Fecha prevista: 29/04/2027
|
|
|
8,82 €
|
|
|
5,73 €
|
|
|
4,58 €
|
|
|
4,33 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4,59 €
-
11.000Fecha prevista: 02/07/2026
|
N.º Ref. Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFET de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
11.000Fecha prevista: 02/07/2026
|
|
|
4,59 €
|
|
|
3,05 €
|
|
|
2,48 €
|
|
|
2,07 €
|
|
|
1,80 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET de SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
6,88 €
-
No en almacén Plazo producción 52 Semanas
-
NRND
|
N.º Ref. Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFET de SiC SILICON CARBIDE MOSFET
|
|
No en almacén Plazo producción 52 Semanas
|
|
|
6,88 €
|
|
|
4,23 €
|
|
|
3,80 €
|
|
|
3,33 €
|
|
Mín.: 1
Múlt.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
España