Los emisores IR VSMG10850 y VSMB10940, y el fotodiodo de pin de silicio VEMD10940F de Vishay Semiconductors son emisores de infrarrojos de alta velocidad de 850 nm y 940 nm, y un fotodiodo de pin de silicio de alta velocidad y adaptado al paquete, con alta sensibilidad a la radiación de entre 780 nm y 1050 nm. Los VSMG10850, VSMB10940 y VEMD10940F ofrecen cada uno un ángulo excepcionalmente ancho de ±75° de la mitad de la intensidad en un paquete compacto, de vista lateral y montaje en superficie que mide 3 mm x 2 mm x 1 mm.
Características
Photodiode
High radiant sensitivity from 1mW/sr to 1800mW/sr
Daylight blocking filter matched with 830nm to 950nm IR Emitters
Reverse light current of 3μA
1nA low dark current
920nm wavelength of peak sensitivity
Low 0.1%/K temperature coefficient of light current
Compact package measures 3mm x 2mm with a height of only 1mm
Ultra-wide ±75º angle of half-intensity
Floor life of 168 hours and moisture sensitivity level (MSL) of 3 following J-STD-020
Support lead (Pb)-free reflow soldering
Conform to Vishay's "green" standards
IR Emitters
Peak wavelengths of 830nm and 950nm
Clear, untinted plastic packages
High radiant sensitivity from 1mW/sr to 1800mW/sr
Fast switching times of 15ns
GaAIAs multi-quantum well (MQW) and double hetero (DH) technology
Low forward voltage down to 1.3V typical
Aplicaciones
IR touch panels for devices
Printer displays
eBook readers
Smartphones
Tablets
Ultrabooks
GPS units
High power emitters for limited spaces
High performance transmissive or reflective sensors