ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes

ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes feature a silicon epitaxial planar structure and 30V, 40V, or 60V repetitive peak reverse voltage. The RBRxxBGE Schottky Barrier Diodes offer high reliability, a low VF, and cathode common dual type. The ROHM RBRxxBGE Diodes are designed for switching power supply applications.

Features

  • High reliability
  • Power mold type
  • Cathode common dual type
  • Low VF

Rohm's Power Diode Family

ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes

Package Style

Location Circuit - ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes
Publicado: 2021-02-04 | Actualizado: 2022-03-11