ROHM Semiconductor RBQxxBGE Schottky Barrier Diodes
ROHM Semiconductor RBQxxBGE Schottky Barrier Diodes feature a silicon epitaxial planar structure and 45V or 65V repetitive peak reverse voltage. The RBQxxBGE Schottky Barrier Diodes offer high reliability, a low IR, and cathode common dual type. The ROHM RBQxxBGE Diodes are designed for switching power supply applications.
Features
- High reliability
- Power mold type
- Cathode common dual type
- Low IR
Block Diagram
Associated Products
ROHM Semiconductor Schottky Barrier Diodes
High-reliability, low-loss devices available in a variety of packages.
Package Style
Additional Resources
Publicado: 2021-02-04
| Actualizado: 2022-03-11