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onsemi UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

Features

  • 650V 30mΩ and 40mΩ; and 1200V 40mΩ
  • ESD protected and HBM class 2
  • Gate-drive characteristics with drop-in replacement
  • 175°C maximum operating temperature
  • 43nC low gate charge
  • 5V typical threshold voltage
  • Kelvin source pin for optimized switching performance

Applications

  • Telecom and server power
  • Motor drives
  • Induction heating
  • Industrial power supplies
  • Power factor correction modules

Package Outline

Resources

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View Results ( 3 ) Page
Número de referencia Hoja de datos Vds (Tensión separación drenador-fuente) Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Pd (disipación de potencia) Tiempo de caída Tiempo de establecimiento Tiempo típico de retraso de apagado Tiempo de retardo de conexión típico
UF3SC065040B7S UF3SC065040B7S Hoja de datos 650 V 43 A 42 mOhms 195 W 9 ns, 12 ns 24 ns, 27 ns 45 ns, 47 ns 22 ns
UF3SC120040B7S UF3SC120040B7S Hoja de datos 1.2 kV 47 A 35 mOhms 214 W 7 ns, 8 ns 12 ns, 13 ns 47 ns 37 ns
UF3SC065030B7S UF3SC065030B7S Hoja de datos 650 V 62 A 27 mOhms 214 W 11 ns, 9 ns 26 ns, 28 ns 46 ns 23 ns
Publicado: 2021-05-27 | Actualizado: 2025-07-25