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onsemi FGY100T120RWD IGBTs

onsemi FGY100T120RWD IGBTs combines novel field stop 7th generation IGBT technology in a TO247 3-lead package. The FGY100T120RWD features optimum performance, low conduction losses, and good switching controllability. The onsemi FGY100T120RWD IGBTs produce a high-efficiency operation in various applications, including motor control, UPS, data center, and high-power switches.

Features

  • Low conduction loss and optimized switching
  • Maximum junction temperature of TJ = +175°C
  • Positive temperature coefficient for easy parallel operation
  • High current capability
  • 100% of the parts are dynamically tested
  • Short circuit rated
  • RoHS Compliant
  • TO247 3-Lead package

Applications

  • Motor control
  • UPS
  • General application requiring high power switch

Specifications

  • 100A Collector current
  • 1.4V VCE(SAT)
  • 1200V Collector-to-emitter voltage
  • 5µs Short circuit withstand time
  • 300A Pulsed collector current

Typical Application

onsemi FGY100T120RWD IGBTs

Output Characteristics

Performance Graph - onsemi FGY100T120RWD IGBTs
Publicado: 2023-04-18 | Actualizado: 2023-11-29