Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs
Taiwan Semiconductor TQMxNB04CR and TQMxNB06CR 40V/60V Automotive MOSFETs are AEC-Q101 qualified, 100% UIS and Rg tested, and feature a junction temperature range of -55°C to +175°C. These Taiwan Semiconductor N-channel, trench-technology MOSFETs offer a low gate charge for fast switching and a low ON resistance to minimize conductive losses. These devices are offered in a RoHS-compliant, Pb-free, and Halogen-free PDFN56U package with wettable flanks.
Features
- AEC-Q101 qualified
- 100% UIS and Rg tested
- Low gate charge for fast switching
- Low RDS(ON)
- +175°C operating junction temperature
- PDFN56U package with wettable flanks
- RoHS-compliant
- Halogen-free according to IEC 61249-2-21
Applications
- 12V automotive systems
- Solenoid and motor control
- Automotive transmission control
- DC-DC converters
Resources
Package Outline
Videos
Associated Products
Taiwan Semiconductor TQMx Automotive Power MOSFETs
Designed by trench technology for single and dual channels.
View Results ( 3 ) Page
| Número de referencia | Hoja de datos | Vds (Tensión separación drenador-fuente) | Id: corriente de drenaje continuo | Rds encendido (drenaje de la fuente en resistencia) | Qg (carga de compuertas) | Pd (disipación de potencia) |
|---|---|---|---|---|---|---|
| TQM033NB04CR RLG |  |
40 V | 121 A | 3.3 mOhms | 87 nC | 107 W |
| TQM150NB04CR RLG | |
40 V | 41 A | 15 mOhms | 20 nC | 56 W |
| TQM050NB06CR RLG | |
60 V | 104 A | 5 mOhms | 114 nC | 136 W |
Publicado: 2020-05-21
| Actualizado: 2024-11-27