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Taiwan Semiconductor TQM0xNH04CR Power MOSFETs

Taiwan Semiconductor TQM0xNH04CR Power MOSFETs are AEC-Q101-qualified single N-channel MOSFETs. These power MOSFETs offer excellent FOM and wettable flank leads for enhanced AOI. The N-channel power MOSFETs are 100% UIS and Rg tested and operate at 175°C junction temperature. These power MOSFETs feature 40V drain-source voltage and 400A pulse drain current and come in a PDFN56U package. The TQM0xNH04CR power MOSFETs are halogen-free and RoHS-compliant. Typical applications include automotive applications, solenoid and motor drivers, and DC-to-DC converters.

Features

  • Excellent FOM
  • AEC-Q101 qualified
  • Wettable flank leads for enhanced AOI
  • 100% UIS and Rg tested
  • Moisture Sensitivity Level-1 (MSL-1) per J-STD-020
  • PDFN56U package
  • RoHS compliant
  • Halogen-free

Specifications

  • PDFN56U package
  • -55°C to 175°C operating junction temperature range
  • 40V drain-source voltage (VDS)
  • 400A pulsed drain current (IDM)

Applications

  • Automotive applications
  • Solenoid and motor drivers
  • DC-to-DC converters

Package Outline Dimensions

Mechanical Drawing - Taiwan Semiconductor TQM0xNH04CR Power MOSFETs

Videos

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Número de referencia Hoja de datos Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Vgs (tensión de compuerta-fuente) Vgs th (tensión umbral compuerta-fuente) Qg (carga de compuertas) Pd (disipación de potencia) Tiempo de establecimiento Tiempo de caída Tiempo típico de retraso de apagado Tiempo de retardo de conexión típico
TQM019NH04CR RLG TQM019NH04CR RLG Hoja de datos 214 A 2.3 mOhms - 20 V, 20 V 3.6 V 64 nC 150 W 76 ns 18 ns 52 ns 23 ns
TQM025NH04CR RLG TQM025NH04CR RLG Hoja de datos 174 A 2.5 mOhms - 20 V, 20 V 3.6 V 42 nC 136 W 70.6 ns 5.8 ns 27 ns 15.1 ns
Publicado: 2023-07-17 | Actualizado: 2024-02-02