STMicroelectronics STPSC2H12-Y Schottky Silicon Carbide Diodes
STMicroelectronics STPSC2H12-Y Schottky Silicon Carbide Diodes are ultra-high-performance power Schottky diodes. STMicroelectronics STPSC2H12-Y diodes are manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200V rating. Due to the Schottky construction, norecovery is shown at turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Features
- AEC-Q101 qualified
- PPAP capable
- No or negligible reverse recovery
- High forward surge capability
- -40°C to 175°C operating junction temperature
- 3mm creepage distance per IEC 60664-1
- ECOPACK2 compliant component
Applications
- The bootstrap function of SiC MOSFETS
- Snubber diodes
- Switching diodes
Related Diodes
STMicroelectronics Power Schottky Low VF Diodes
Features the lowest possible forward voltage drop (VF).
STMicroelectronics Power Schottky High-Temperature Diodes
Features low leakage current and an excellent guard band against thermal runaway in applications.
STMicroelectronics Power Schottky Medium VF & IR Diodes
The intermediate trade-off between forward voltage drop and leakage current.
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Publicado: 2019-12-10
| Actualizado: 2024-02-14