ROHM Semiconductor Small Signal Dual Channel MOSFETs
ROHM Semiconductor Small Signal Dual Channel MOSFETs feature low on-resistance and fast switching. These MOSFETs are RoHS compliant and include Pb-free plating. The dual channel MOSFETs operate from -55°C to 150°C temperature range. These MOSFETs are used in motor drives and switching applications.Features
- Low on-resistance
- Fast switching
- -55°C to 150°C operating temperature range
- Halogen-free
- Pb-free plating
- RoHS compliant
- 100% Rg and UIS tested
Applications
- Switching
- Motor drives
Power Dissipation Derating Curve
View Results ( 12 ) Page
| Número de referencia | Hoja de datos | Id: corriente de drenaje continuo | Qg (carga de compuertas) | Rds encendido (drenaje de la fuente en resistencia) | Tiempo de establecimiento | Vds (Tensión separación drenador-fuente) | Vgs (tensión de compuerta-fuente) | Vgs th (tensión umbral compuerta-fuente) | Transconductancia delantera: mín. | Tiempo de retardo de conexión típico | Tiempo típico de retraso de apagado | Polaridad de transistor | Pd (disipación de potencia) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AW2K21AR | ![]() |
20 A | 29 nC | 3 mOhms | 5.9 ns | 30 V | - 2 V, 10 V | 2 V | 8.9 ns | 487 ns | N-Channel | 1.6 W | |
| HP8KF7HTB1 | ![]() |
18.5 A | 20 nC | 62 mOhms | 11 ns | 150 V | 24 V | 4 V | 7.1 S | 19 ns | 40 ns | N-Channel | 26 W |
| HT8KF6HTB1 | ![]() |
7 A | 6.4 nC | 214 mOhms | 9.1 ns | 150 V | 20 V | 4 V | 2.5 S | 11 ns | 19 ns | N-Channel | 14 W |
| HT8MB5TB1 | ![]() |
12 A, 15 A | 3.5 nC, 16.7 nC | 47 mOhms, 56 mOhms | 4.7 ns, 29 ns | 40 V, 40 V | 20 V, 20 V | 2.5 V, 2.5 V | 2.1 S, 6 S | 5 ns, 9.6 ns | 11 ns, 86 ns | N-Channel, P-Channel | 13 W |
| HT8MC5TB1 | ![]() |
10 A, 11.5 A | 3.1 nC, 17.1 nC | 90 mOhms, 109 mOhms | 5 ns, 17 ns | 60 V, 60 V | 20 V, 20 V | 2.5 V, 2.5 V | 2.3 S, 5 S | 5.3 ns, 9.7 ns | 13 ns, 91 ns | N-Channel, P-Channel | 13 W |
| R8011KNZ4C13 | ![]() |
11 A | 37 nC | 450 mOhms | 25 ns | 800 V | 30 V | 4.5 V | 2.5 S | 25 ns | 70 ns | N-Channel | 139 W |
| R8019KNZ4C13 | ![]() |
19 A | 65 nC | 265 mOhms | 50 ns | 800 V | 30 V | 4.5 V | 2.5 S | 35 ns | 110 ns | N-Channel | 208 W |
| RS6E122BGTB1 | ![]() |
155 A | 50 nC | 2.16 mOhms | 19 ns | 30 V | 20 V | 2.5 V | 55 S | 31 ns | 66 ns | N-Channel | 89 W |
| HT8MD5HTB1 | ![]() |
9 A, 8.5 A | 3.1 nC, 17.2 nC | 112 mOhms, 191 mOhms | 5 ns, 7 ns | 80 V, 80 V | 20 V, 20 V | 4 V, 4 V | 1.8 S, 3 S | 5.8 ns, 9.4 ns | 12 ns, 74 ns | N-Channel, P-Channel | 13 W |
| RD3N03BATTL1 | ![]() |
30 A | 50 nC | 64 mOhms | 15 ns | 80 V | 20 V | 4 V | 13.4 S | 15 ns | 225 ns | P-Channel | 54 W |
Publicado: 2025-06-15
| Actualizado: 2025-07-02

