ROHM Semiconductor RFVxBGE6STL Super Fast Recovery Diodes
ROHM Semiconductor RFVxBGE6STL Super Fast Recovery Diodes feature hyperfast recovery, ultra-low switching loss, and high current overload capacity. These recovery diodes operate at 1.6V to 2.8V forward voltage range and stored at -55°C to 150°C temperature range. The RFVxBGE6STL recovery diodes offer 600V repetitive peak reverse voltage, 600V reverse voltage, and 150°C junction temperature. These superfast recovery diodes are ideal for use in general rectification for PFC in continuous current mode.
Features
- Hyperfast recovery/hard recovery type
- Ultra-low switching loss
- High current overload capacity
- Silicon epitaxial planar type construction
Specifications
- RFV5BGE6S:
- 5A average rectified forward current
- 60A peak forward surge current
- RFV8BGE6S:
- 8A average rectified forward current
- 100A peak forward surge current
- 1.6V to 2.8V forward voltage range
- -55°C to 150°C storage temperature range
- 600V repetitive peak reverse voltage
- 600V reverse voltage
- 150°C junction temperature
Mechanical Drawing
Additional Resources
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| Número de referencia | Hoja de datos | Corriente de sobretensión máx. | If - Corriente delantera | Vf - Tensión delantera |
|---|---|---|---|---|
| RFV5BGE6STL |  |
60 A | 5 A | 2.8 V |
| RFV8BGE6STL | |
100 A | 8 A | 2.8 V |
Publicado: 2021-02-23
| Actualizado: 2022-03-11