ROHM Semiconductor RFUH25NS3S Fast Recovery Diodes
ROHM Semiconductor RFUH25NS3S Fast Recovery Diodes feature ultra-low switching loss and high current overload capacity. These recovery diodes include silicon epitaxial planar-type construction. The RFUH25NS3S recovery diodes offer 350V repetitive peak reverse voltage, 10μA reverse current, and 100A forward current surge peak. These recovery diodes operate at 1.45V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH25NS3S super fast recovery diodes are ideal for use in general rectification.
Features
- Ultra-low switching loss
- High current overload capacity
- Silicon epitaxial planar type construction
- 350V repetitive peak reverse voltage
- 10μA reverse current
- 1.45V maximum forward voltage
- -55°C to 150°C storage temperature range
Applications
- General rectification
Mechanical Drawings
Publicado: 2021-02-26
| Actualizado: 2024-09-06