PANJIT 150V N-Channel Enhancement-Mode MOSFETs

PANJIT 150V N-Channel Enhancement-Mode MOSFETs are designed with high-speed switching and operate from 4A to 125A continuous drain current. These enhancement-mode MOSFETs are non-automotive devices that operate from -55°C to 175°C junction and storage temperature range. The 150V N-channel MOSFETs are 100% avalanche tested and 100% Rg tested. These N-channel MOSFETs are lead-free in compliance with EU RoHS 2.0. The 150V N-channel MOSFETs are ideal for Battery Management Systems (BMS), Brushless Direct Current (BLDC), and Switch Mode Power Supplies (SMPS).

Features

  • High switching speed
  • Low drain resistance
  • 100% avalanche tested
  • Non-automotive devices
  • 100% Rg tested
  • -55°C to 175°C junction and storage temperature range
  • Green molding compound as per IEC 61249 standard
  • Lead-free in compliance with EU RoHS 2.0

Applications

  • Battery Management System (BMS)
  • Brushless Direct Current (BLDC)
  • Switch Mode Power Supply (SMPS) SR
View Results ( 6 ) Page
Número de referencia Hoja de datos Empaquetado / Estuche Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Vgs (tensión de compuerta-fuente) Qg (carga de compuertas) Pd (disipación de potencia) Tiempo de establecimiento Tiempo típico de retraso de apagado Tiempo de retardo de conexión típico
PJL9580_R2_00201 PJL9580_R2_00201 Hoja de datos SOP-8 9 A 54 mOhms - 20 V, 20 V 22 nC 10.4 W 14 ns 17 ns 8.4 ns
PSMP075N15NS1_T0_00601 PSMP075N15NS1_T0_00601 Hoja de datos
PJD30N15_L2_00001 PJD30N15_L2_00001 Hoja de datos TO-252AA-3 25 A 90 mOhms - 25 V, 25 V 29.5 nC 102 W 21 ns 32 ns 14 ns
PJD40N15_L2_00001 PJD40N15_L2_00001 Hoja de datos TO-252AA-3 40 A 35 mOhms - 20 V, 20 V 52 nC 131 W 100 ns 35 ns 17 ns
PJQ5494_R2_00001 PJQ5494_R2_00001 Hoja de datos
PJL9480_R2_00001 PJL9480_R2_00001 Hoja de datos SOP-8 4 A 85 mOhms - 25 V, 25 V 29.5 nC 2.5 W 21 ns 32 ns 14 ns
Publicado: 2024-08-05 | Actualizado: 2024-08-29