onsemi J-Series Silicon Photomultiplier (SiPM) Sensors
onsemi J-Series Silicon Photomultiplier (SiPM) Sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50%, with sensitivity extending down into the UV. These sensors feature industry-leading low dark count rates of 50kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process, they feature an exceptional breakdown voltage uniformity of ±250mV. The J-Series sensors are available in 3mm, 4mm, and 6mm sizes packaged in a TSV chip-scale package that is compatible with industry-standard, lead-free, reflow soldering processes. onsemi J-Series Silicon Photomultiplier (SiPM) Sensors also feature onsemi's unique fast output for fast timing capability.Features
- High-density microcells
- Fast output terminal
- Temperature stability of 21.5mV/°C
- ±250mV breakdown voltage uniformity
- Available in a reflow solder-compatible TSV chip-scale package
- Ultra-low dark count rates of 50kHz/mm2 typical
- Optimized for high-performance timing applications, such as ToF-PET
- 3mm, 4mm, and 6mm sensor sizes
- <30V bias voltage
- 50% photon detection efficiency (PDE) at 420nm
- Improved signal rise time and microcell recovery time
- Negates the need for active voltage control
- High uniformity
- TSV package results in almost zero dead space, allowing the creation of high fill factor arrays and is ferrous-metal free
Applications
- Medical imaging
- Hazard and threat
- 3D ranging and sensing
- Biophotonics and sciences
- High energy physics
Publicado: 2018-11-16
| Actualizado: 2023-01-27
