onsemi FOD3125 High-Temperature Gate Drive Optocouplers
onsemi FOD3125 High-Temperature Gate Drive Optocoupler offers a 2.5A output current and is designed to drive most medium power IGBT/MOSFET at high temperatures up to +125°C. The FOD3125 is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications and high-performance power systems. The FOD3125 Gate Drive Optocoupler utilizes the proprietary onsemi Optoplanar® packaging technology and optimized IC design to achieve high noise immunity, characterized by high common mode rejection.
The FOD3125 Gate Drive Optocoupler consists of a Gallium Aluminum Arsenide (AlGaAs) Light Emitting Diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.
Features
- Extended -40°C to +125°C industrial temperate range
- High noise immunity characterized by 35kV/µs minimum common mode rejection
- 2.5A peak output current driving capability for most 1200V/20A IGBTs
- Use of P-channel MOSFETs at the output stage enables output voltage swing close to the supply rail
- Wide supply voltage range from 15V to 30V
- Fast switching speeds
- 400ns maximum propagation delay
- 100ns maximum pulse width distortion
- Under-Voltage Lockout (UVLO) with hysteresis
- Safety and Regulatory (pending approval)
- UL1577, 5000VAC/RMS for 1 minute
- DIN EN/IEC60747-5-5, 1414V peak working insulation voltage
- RDS(ON) of 1Ω (typical) offers lower power dissipation
- Pb-free device
Applications
- Industrial inverters
- Uninterruptible power supplies
- Induction heating
- Isolated IGBT/power MOSFET gate drives
Block Diagram
Publicado: 2019-04-17
| Actualizado: 2024-01-29