onsemi FDMS36xxS Power Stage Dual Asymmetric MOSFETs

onsemi FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide a high output current capability in a 5mm x 6mm dual MOSFET solution. These modules incorporate control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET are designed to deliver optimal power efficiency for output currents up to 30A. These onsemi devices are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.

Features

  • Integrated control FET (high side) and synchronous FET (low side)
  • MOSFETs and Schottky body diode in 5mm x 6mm PQFN package
  • Reduces footprint area by replacing two or three 5mm x 6mm components
  • Provides high power density for point-of-load and multi-phase synchronous buck DC-DC applications
  • Clip technology reduces synchronous FET (low side) RDS(ON) to below 2mΩ
  • Shielded gate technology reduces switch node ringing, which eliminates need for external snubbers or gate resistors in most applications
  • Ultra-low source inductance on synchronous FET
  • Conventional pinout and footprint

Applications

  • DC-DC synchronous-buck conversion
  • Desktops, notebooks, and servers
  • Telecommunications, routing, and switching

Videos

Publicado: 2011-06-17 | Actualizado: 2024-02-01