NXP Semiconductors A5G35H110N Evaluation Board
NXP Semiconductors A5G35H110N Evaluation Board is used with the A5G35H110N Airfast RF Power GaN Transistor. The board is designed for 32T, 320W radio units (10W avg. at each antenna). Its target band is B42, and it offers 2x more power in the same package as 64T solutions.
Features
- 48V GaN discrete transistor
- At 7.6dB OBO
- 41.8dBm avg. (15W)
- 15dB gain
- 54% drain efficiency (Doherty)
- 3300-3700MHz
- 49.4dBm peak (85W)
- DFN 7 x 6.5 over-molded plastic package
- Asymmetric – 1.9:1 ratio, input and output pre-matched
Typical Lineup
Publicado: 2022-04-26
| Actualizado: 2023-04-06