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NXP Semiconductors MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs

NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land-mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50VDC, 230MHz at all phase angles.

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single--Ended or in a Push--Pull Configuration
  • Qualified Up to a Maximum of 50VDD Operation
  • Characterized from 30V to 50V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • RoHS Compliant

Applications

  • Industrial: Laser and Plasma Exciters
  • Broadcast: Analog and Digital
  • Aerospace
  • Radio/Land Mobile Devices
View Results ( 2 ) Page
Número de referencia Hoja de datos Ganancia Energía de salida Empaquetado / Estuche
MRFE6VP6300HR5 MRFE6VP6300HR5 Hoja de datos 26.5 dB 300 W NI-780-4
MRFE6VP5600HR5 MRFE6VP5600HR5 Hoja de datos 25 dB 600 W NI-1230
Publicado: 2011-02-11 | Actualizado: 2025-12-16