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Nexperia PSMN047-100NSE N-Channel ASFET

Nexperia PSMN047-100NSE N-Channel Application Specific MOSFET (ASFET) helps enable Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). These solutions place increased demands on power sourcing equipment (PSE) in terms of “soft-start,” thermal management, and power density requirements. The 100V, 53mΩ PSMN047-100NSE ASFET combines enhanced SOA in a compact 2mm x 2mm footprint, placing it ideally for various applications, including PoE, eFuse, and relay replacement. 

Features

  • Enhanced safe operating area (SOA) for superior linear mode operation
  • Low RDSon for low I2R conduction losses
  • Very low IDSS leakage
  • Plastic 2mm x 2mm x 0.65mm space-saving DFN2020 package, 60% smaller than LFPAK33
  • RoHS complaint

Applications

  • High-power PoE applications (60W and higher)
  • IEEE802.3at and proprietary PoE solutions
  • Fault-tolerant load switches (inrush management and eFuse applications)
  • Battery management applications
  • Relay replacement
  • WIFI hotspots
  • 5G picocells
  • CCTV

Specifications

  • 100V maximum drain-source voltage
  • 18.4A maximum drain current
  • 42W maximum total power dissipation
  • 22.3nC typical source-drain diode recovery charge
  • 13.8mJ maximum non-repetitive drain-source avalanche energy
  • -55°C to +175°C junction temperature range
Publicado: 2024-03-19 | Actualizado: 2024-04-04