Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor
Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package with solderable side pads reduces printed circuit board (PCB) area requirements.
Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- High-temperature applications up to 175°C
- Reduced Printed-Circuit Board (PCB) area requirements
- Leadless small SMD plastic package with solderable side pads
- Exposed heat sink for excellent thermal and electrical conductivity
- Suitable for Automatic Optical Inspection (AOI) of solder joint
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- Linear voltage regulation
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Pin Assignment
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Publicado: 2022-05-12
| Actualizado: 2023-07-05