Nexperia NX6008NBK N-channel Trench MOSFETs

Nexperia NX6008NBK N-channel Trench MOSFETs are designed for fast switching actions and feature low threshold voltage. These MOSFETs operate at 60V drain-source voltage (VDS), 8V maximum gate-source voltage (VGS), and -55°C to 150°C junction temperature range (Tj). The NX6008NBK MOSFETs are used in applications like relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • SOT323, SOT363, and SOT23 SMD packages
  • ElectroStatic Discharge (ESD) protection > 2kV HBM

Specifications

  • 60V drain-source voltage (VDS)
  • 8V maximum gate-source voltage (VGS)
  • -55°C to 150°C junction temperature range (Tj)
  • -65°C to 150°C storage temperature range (Tstg)

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Characteristics Curve

Performance Graph - Nexperia NX6008NBK N-channel Trench MOSFETs
View Results ( 3 ) Page
Número de referencia Hoja de datos Empaquetado / Estuche Número de canales Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Qg (carga de compuertas) Pd (disipación de potencia) Configuración Tiempo de caída
NX6008NBKSX NX6008NBKSX Hoja de datos SOT-363-6 2 Channel 220 mA 2.7 Ohms 460 pC 286 mW Dual 4 ns
NX6008NBKR NX6008NBKR Hoja de datos SOT-23-3 1 Channel 270 mA 2.8 Ohms 500 pC 330 mW Single 3 ns
NX6008NBKWX NX6008NBKWX Hoja de datos SOT-323-3 1 Channel 250 mA 2.8 Ohms 500 pC 300 mW Single 3 ns
Publicado: 2022-01-20 | Actualizado: 2022-03-11