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Monolithic Power Systems (MPS) MP8699B Half-Bridge GaN MOSFET Drivers

Monolithic Power Systems (MPS) MP8699B Half-Bridge GaN MOSFET Drivers are designed to drive enhancement-mode gallium nitride (GaN) MOSFETs and N-channel MOSFETs with low gate voltages in half-bridge or synchronous applications. These devices have independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.

The MP8699B employs MPS’s proprietary bootstrap (BST) technique for the high-side MOSFET (HS-FET) driver voltage and can operate up to 100V. The BST charging technology prevents the HS-FET driver voltage from exceeding the supply voltage (VCC), which prevents the gate voltage (VGATE) from exceeding the enhancement-mode GaN MOSFET’s maximum gate-to-source voltage (VGS) rating.

The MP8699B has two separate gates for independent MOSFET turn-on and turn-off speed control by adding impedance to the gate loop. The MP8699B is available in a WLCSP-12L (2mm x 2mm) package.

Features

  • Independent High-Side (HS) and Low-Side (LS) logic inputs
  • High-Side MOSFET (HS-FET) floating bias voltage rail operates up to 100VDC
  • Separate gate outputs for adjustable turn-on and turn-off speed control
  • 4.5V to 5.5V supply voltage (VCC) range
  • 0.2Ω pull-down resistance and 1.3Ω pull-up resistance
  • Fast propagation time (typ. 17ns)
  • Excellent propagation delay matching (typ. 1.5ns)
  • Available in a WLCSP-12L (2mm x 2mm) package

Applications

  • Half- and full-bridge converters
  • Synchronous buck converters
  • Power modules

Typical Application

Application Circuit Diagram - Monolithic Power Systems (MPS) MP8699B Half-Bridge GaN MOSFET Drivers
Publicado: 2025-04-18 | Actualizado: 2025-04-22