IXYS XPT™ GenX5™ Trench IGBTs

IXYS XPT™ GenX5™ Trench IGBTs are developed using proprietary XPT thin-wafer technology and state-of-the-art 5th generation (GenX5) Trench IGBT process. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The XPT GenX5 Trench IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and a 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. These IGBTs also include a positive collector-to-emitter voltage temperature coefficient, enabling designers to use multiple devices in parallel to meet high current requirements. The low gate charge of these devices helps reduce gate drive requirements and switching losses.