Infineon Technologies Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Customer Benefits

• Best price/performance ratio
• Largest SJ MOSFET portfolio in the market
• Mature, stable, and well-established

CoolSiC™ Customer Benefits

• High performance, robustness, and ease of use
• High reliability, especially at high temperatures and in harsh environments
• Smaller system size

CoolGaN™ Customer Benefits

• Highest efficiency at highest switching frequencies
• Smallest system size for highest power density
• Enables system integration

Infineon CoolMOS SJ MOSFET products boast outstanding figures of merit in conduction, switching, and driving losses. CoolSiC and CoolGaN enable extremely efficient and compact system designs that meet the demand for greener and better-performing products. Additionally, a comprehensive portfolio of adequate gate-driver ICs optimized for silicon and wide bandgap technologies unlock the full potential of the switches. In the 600 and 650 voltage classes of power products, users will find that Infineon’s CoolMOS, CoolSiC, and CoolGaN coexist, delivering a distinct value proposition depending on the specific application.

The fabrication of practical silicon unipolar diodes (Schottky diodes) is limited to a range of up to 100V to 150V with relatively high on-state resistance and leakage current. In comparison, silicon-carbide-based Schottky diodes can reach a much higher breakdown voltage. Infineon offers 600V, 650V, and 1200V SiC-based CoolSiC Schottky diodes.