Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET
Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET is a 40V automotive-compliant MOSFET that features a typical RDS(ON) of 0.54mΩ at a gate drive of 10V, with a gate charge of 117nC. The DMTH4M70SPGWQ is offered in a PowerDI®8080-5 innovative high current, thermally efficient power package, ideal for electric vehicle (EV) applications. The AEC-Q101 qualified Diodes Incorporated DMTH4M70SPGWQ MOSFET facilitates designers of automotive high-power BLDC motor drives, DC-DC converters, and charging systems to maximize system efficiency while guaranteeing power dissipation is kept to an absolute minimum. The device provides an operating temperature of up to +175°C.
Features
- Rated to +175°C, ideal for high ambient temperature environments
- 100% unclamped inductive switching (UIS) test in production, ensures a more reliable and robust end application
- High conversion efficiency
- Low RDS(ON), minimizes power losses
- Wettable flank for improved optical inspection
- Fast switching speed
- Low input capacitance
- Lead-free finish, RoHS compliant
- Halogen and antimony free, "green" device
- Suitable for automotive applications requiring specific change control
- AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949-certified facilities
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Package Style
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Publicado: 2022-06-02
| Actualizado: 2022-11-30