Diodes Incorporated DESD3V3Z1BCSF Ultra-Low-Capacitance TVS Diode

Offering an ultra-low input capacitance, a typical 4.5V clamping voltage, and a maximum 3.3V reverse standoff voltage, DESD3V3Z1BCSF protects mixed-signal SoCs and ensures the devices operate within safe limits. With an input capacitance as low as 0.17pF, DESD3V3Z1BCSF's insertion loss over any pair of high-speed differential transmission lines meets or exceeds those required by USB 3.1/3.2 and Thunderbolt™ 3. In addition, the DESD3V3Z1BCSF can withstand repetitive ESD strikes (VESD) up to ±8kV per IEC61000-4-2 for air and contact discharge. In compliance with IEC61000-4-5 (8/20μs), the DESD3V3Z1BCSF provides a 9V breakdown voltage, 3A max. peak pulse current, and a low clamping voltage.

DESD3V3Z1BCSF's ability to provide exceptional TVS/ESD protection to the high-speed I/O ports of advanced SoCs featuring differential signal lines running at 5GHz and beyond makes the device ideally suited for high-speed interfaces such as USB 3.1/3.2 and Thunderbolt™ 3. In addition, DESD3V3Z1BCSF's ultra-compact X2-DSN0603-2 package with a 0.6mm x 0.3mm footprint and ultra-low z-height of 0.3mm allows the device to fit in tight application environments.