SiC E1B Modules

onsemi SiC E1B Modules feature a unique cascode circuit with a normally on SiC JFET co-packaged with a Si MOSFET, resulting in a normally off SiC FET. The SiC E1B series offers a silicon-like gate drive that supports unipolar gate drives compatible with Si IGBTs, Si FETs, SiC MOSFETs, and Si super junction devices. Housed in the E1B module package, these onsemi devices boast ultra-low gate charge and excellent switching characteristics, making them ideal for hard-switching and ZVS soft-switching applications. The modules incorporate advanced Ag sintering die attach technology for superior power cycling and thermal performance.